FDC640P mosfet equivalent, p-channel mosfet.
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-4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V
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Rugged gate rating (±12V). High performance trench technology f.
for a wide range of gate drive voltages.
Features
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-4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077.
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages.
Features
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-4.5.
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